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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 200V(Min) *High Switching Speed APPLICATIONS *Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: *Switching regulators *Inverters *Solenoid and relay drivers *Motor controls *Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCEV VCEO VEBO IC ICM IB B MJ13330 PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature VALUE 400 200 6 20 30 10 20 175 200 -65~200 UNIT V V V A A A A W IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEV ICER IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current Gain-Bandwidth Product Output Capacitance CONDITIONS IC=100mA ; IB=0 IC= 10A; IB= 1.5A IC= 10A; IB= 1.8A,TC=100 IC= 20A; IB= 5A IC= 10A; IB= 1.5A IC= 10A; IB= 1.8A,TC=100 VCEV=400V;VBE(off)=1.5V VCEV=400V;VBE(off)=1.5V;TC=150 VCE= 400V; RBE= 50,TC= 100 VEB= 6V; IC=0 IC= 5A ; VCE= 5V IC= 10A ; VCE= 5V IC= 0.3A ;VCE= 10V; ftest=1MHz IE= 0; VCB= 10V; ftest=100kHz 15 8 5 100 MIN 200 MJ13330 TYP. MAX UNIT V 1.5 2.5 3.5 1.8 1.8 0.25 5.0 5.0 0.5 75 V V V mA mA mA 40 400 pF Switching times;Resistive Load td tr ts tf Delay Time Rise Time Storage Time Fall Time IC= 10A , VCC= 175V; IB1= 1.5A VBE(off)= 5V; tp= 50s; Duty Cycle2.0% 0.08 0.55 0.7 0.11 0.2 1.0 3.5 0.7 s s s s isc Websitewww.iscsemi.cn 2 |
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